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1

Structure optimization of field-plate AlGaN/GaN HEMTs

Weijun Luo, Ke Wei, Xiaojuan Chen, Chengzhan Li, Xinyu Liu, Xiaoliang Wang

Journal:

Microelectronics Journal

Year:

2007

Language:

english

File:

PDF, 113 KB

english, 2007

2

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

Deng, Xiaochuan, Guo, Yuanxu, Dai, Tianxiang, Li, Chengzhan, Chen, Ximing, Chen, Wanjun, Zhang, Yourun, Zhang, Bo

Journal:

Materials Science in Semiconductor Processing

Year:

2017

Language:

english

File:

PDF, 2.25 MB

english, 2017

3

A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window

Deng, Xiaochuan, Li, Lijun, Wu, Jia, Li, Chengzhan, Chen, Wanjun, Li, Juntao, Li, Zhaoji, Zhang, Bo

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.13 MB

english, 2017

4

High performance 1 mm AlGaN/GaN HEMT based on SiC substrate

Weijun Luo, Xiaojuan Chen, Chengzhan Li, Xinyu Liu, Zhijing He, Ke Wei, Xiaoxin Liang, Xiaoliang Wang

Journal:

Frontiers of Electrical and Electronic Engineering

Year:

2008

Language:

english

File:

PDF, 103 KB

english, 2008

5

High Volumetric Capacitance, Ultralong Life Supercapacitors Enabled by Waxberry-Derived Hierarchical Porous Carbon Materials

Dong, Xiaomei, Jin, Huile, Wang, Rongyue, Zhang, Jingjing, Feng, Xin, Yan, Chengzhan, Chen, Suqin, Wang, Shun, Wang, Jichang, Lu, Jun

Journal:

Advanced Energy Materials

Year:

2018

Language:

english

File:

PDF, 1.55 MB

english, 2018

6

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Investigation on the Modeling of 3300 V SiC MOSFET

Han, Zhonglin, Chen, Hong, Chen, Ximing, Zhao, Yanli, Li, Chengzhan, Yun, Bai

Year:

2019

Language:

english

File:

PDF, 264 KB

english, 2019

7

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Investigation on Short Circuit Test of 3300V SiC MOSFET

Chen, Hong, Chen, Ximing, Han, Zhonglin, Zhao, Yanli, Bai, Yun, Li, Chengzhan, Han, Zhengsheng

Year:

2019

Language:

english

File:

PDF, 201 KB

english, 2019

8

[IEEE 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2019.11.25-2019.11.27)] 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Surge Current Stress

Zhong, Wei, Tang, Yidan, Li, Chengzhan, Chen, Hong, Zhang, Yourun, Bai, Yun, Liu, Xinyu

Year:

2019

Language:

english

File:

PDF, 1.18 MB

english, 2019

9

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Effect of Passivation on Increasing of AlGaN/GaN HEMT Gate Reverse Leakage

Chengzhan, Li, Jian, Liu, Xinyu, Liu, Guoguo, Liu, Dan, Liu, Xiaojuan, Chen, Zhijing, He

Year:

2006

Language:

english

File:

PDF, 74 KB

english, 2006

10

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Structure Optimization of Field-Plate AlGaN/GaN HEMTs

Weijun, Luo, Ke, Wei, Xiaojuan, Chen, Chengzhan, Li, Xinyu, Liu, Xiaoliang, Wang

Year:

2006

Language:

english

File:

PDF, 85 KB

english, 2006

11

Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

Yan, Pu, Lei, Pang, Liang, Wang, Xiaojuan, Chen, Chengzhan, Li, Xinyu, Liu

Journal:

Journal of Semiconductors

Year:

2009

Language:

english

File:

PDF, 1.79 MB

english, 2009

12

Optimization of Process Parameters of Tube Hydroforming Based on Orthogonal Experiment

Du, Jitao, Chen, Chengzhan, Huang, Can, Chen, Qijun

Journal:

Applied Mechanics and Materials

Year:

2011

Language:

english

File:

PDF, 299 KB

english, 2011

13

An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier

Li, Chengzhan, Chen, Zhijian, Huang, Jiwei, Wang, Yongping, Ma, Chuanhui, Yang, Hanbing, Liao, Yinghao, Zhou, Yong, Liu, Bin

Journal:

Journal of Semiconductors

Year:

2011

Language:

english

File:

PDF, 659 KB

english, 2011

14

Manipulating the nickel shape and catalytic performance: from spheres to chains to urchins

Chen, Lin, Fang, Minling, Liu, Chengzhan, Liu, Xianchun, Xing, Shuangxi

Journal:

Year:

2015

Language:

english

File:

PDF, 1.69 MB

english, 2015

15

Optimization to Control Parameters on Rolling of Tailor Rolling Blanks by Orthogonal Test

Du, Jitao, Huang, Can, Chen, Chengzhan, Chen, Qijun

Journal:

Applied Mechanics and Materials

Year:

2011

Language:

english

File:

PDF, 347 KB

english, 2011

16

One-pot achieving well-dispersed copper nanoparticles on N-doped carbon films

Chen, Lin, Wang, Huibo, Liu, Chengzhan, Liu, Xianchun, Xing, Shuangxi

Journal:

Journal of Alloys and Compounds

Year:

2016

Language:

english

File:

PDF, 1.69 MB

english, 2016

17

Correction: Manipulating the nickel shape and catalytic performance: from spheres to chains to urchins

Chen, Lin, Fang, Minling, Liu, Chengzhan, Liu, Xianchun, Xing, Shuangxi

Journal:

Year:

2015

Language:

english

File:

PDF, 122 KB

english, 2015

18

Characterization of the effects of nitrogen and hydrogen passivation on SiO 2 /4H-SiC interface by low temperature conductance measurements

Wang, Yiyu, Peng, Zhaoyang, Shen, Huajun, Li, Chengzhan, Wu, Jia, Tang, Yachao, Zhao, Yanli, Chen, Ximing, Liu, Kean, Liu, Xinyu

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.36 MB

english, 2016

19

Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO 2 after high temperature oxidation

Li, Yanyue, Deng, Xiaochuan, Liu, Yunfeng, Zhao, Yanli, Li, Chengzhan, Chen, Xixi, Zhang, Bo

Journal:

Journal of Semiconductors

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

20

[IEEE 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing, China (2016.11.15-2016.11.17)] 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - R&D of 1200V SiC MOSFETs with nitrided gate oxide and self-aligned channel technology

Peng, Zhaoyang, Shen, Huajun, Chen, Hong, Bai, Yun, Tang, Yidan, Wang, Yiyu, Chen, Ximing, Li, Chengzhan, Liu, Kean, Liu, Xinyu

Year:

2016

Language:

english

File:

PDF, 2.17 MB

english, 2016

21

[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Static and dynamic study in high-voltage 4H-SiC PiN rectifiers

Deng, Xiaochuan, Xixi Chen,, Xuan Li,, Chengzhan Li,, Jia Wu,, Yourun Zhang,

Year:

2016

Language:

english

File:

PDF, 891 KB

english, 2016

22

The prognostic value of lncRNA SNHG1 in cancer patients: a meta-analysis

Dong, Bingzi, Chen, Xian, Zhang, Yunyuan, Zhu, Chengzhan, Dong, Qian

Journal:

Year:

2019

Language:

english

File:

PDF, 1.04 MB

english, 2019

23

Hybrid 3.3âkV/450âA half-bridge IGBT power module with SiC Schottky barrier diodes

Li, Daohui, Luo, Haoze, Huang, Yue, Li, Xiang, Qi, Fang, Packwood, Matthew, Luo, Haihui, Chen, Ximing, Li, Chengzhan, Wang, Yangang, Dai, Xiaoping, Liu, Guoyou

Journal:

IET Power Electronics

Year:

2020

File:

PDF, 2.21 MB

2020

24

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

Lu, Jiang, Liu, Jiawei, Tian, Xiaoli, Chen, Hong, Tang, Yidan, Bai, Yun, Li, Chengzhan, Liu, Xinyu

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 6.51 MB

2020

25

Different JFET Designs on Conduction and Short-circuit Capability for 3.3 kV Planar-gate Silicon Carbide MOSFETs

Chen, Ximing, Li, Xuan, Wang, Yafei, Chen, Hong, Zhou, Caineng, Zhang, Chao, Li, Chengzhan, Deng, Xiaochuan, Wu, Yudong, Zhang, Bo

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 831 KB

2020

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